Photonic Gated-Diode Method for Extracting the Energy-Dependent and the Spatial Distributions of Interface States in MOSFETs
نویسندگان
چکیده
In this paper, a new photonic gated-diode method is proposed to extract the energy-dependent and the spatial distributions of interface states in metal-oxide-semiconductor field-effect transistors (MOSFETs). For the photonic current-voltage (I-V) characterization of MOSFETs, an optical source with a photon energy less than the silicon bandgap (hν = 0.95 eV < Eg = 1.12 eV) is employed for the characterization of interface states (Eit) distributed in the photo-responsive energyband (EC-0.95 ≤ Eit ≤ EC) in MOS systems with polysilicon gates. The proposed novel method is simple and is feasible for accurate extraction of interface traps of MOSFETs.
منابع مشابه
Photonic Gated-Diode Method for Extracting the Energy-Dependent and
In this paper, a new photonic gated-diode method is proposed to extract the energy-dependent and spatial distributions of interface states in MOSFETs. For the photonic current–voltage (I–V) characterization of MOSFETs, an optical source with a photon energy less than the silicon bandgap (hν=0.95eV<Eg=1.12eV) is employed for the characterization of interface states (Eit) distributed in the photo...
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